型号:

AFC158M06G24B-F

RoHS:无铅 / 符合
制造商:Cornell Dubilier Electronics (CDE)描述:CAP ALUM 1500UF 6.3V 20% SMD
详细参数
数值
产品分类 电容器 >> 铝
AFC158M06G24B-F PDF
标准包装 400
系列 AFC
电容 1500µF
额定电压 6.3V
容差 ±20%
寿命@温度 105°C 时为 1000 小时
工作温度 -55°C ~ 105°C
特点 通用
纹波电流 670mA
ESR(等效串联电阻) 290 毫欧
阻抗 150 毫欧
安装类型 表面贴装
封装/外壳 径向,Can - SMD
尺寸/尺寸 0.394" 直径(10.00mm)
高度 - 座高(最大) 0.402"(10.20mm)
引线间隔 -
表面贴装占地面积 0.406" L x 0.406" W(10.30mm x 10.30mm)
包装 散装
相关参数
RCC28DREN-S734 Sullins Connector Solutions CONN EDGECARD 56POS .100 EYELET
H2AXT-10105-S6-ND Hirose Electric Co Ltd JUMPER-H1502TR/A3049S/X 5"
EMH2T2R Rohm Semiconductor TRANS DUAL NPN 50V 30MA EMT6
RCC28DREH-S734 Sullins Connector Solutions CONN EDGECARD 56POS .100 EYELET
H2AXT-10105-R6-ND Hirose Electric Co Ltd JUMPER-H1502TR/A3049R/X 5"
EMH2T2R Rohm Semiconductor TRANS DUAL NPN 50V 30MA EMT6
105-682K API Delevan Inc INDUCTOR RF CHIP 6.8UH 10% SMD
H2AXT-10105-N6-ND Hirose Electric Co Ltd JUMPER-H1502TR/A3049N/X 5"
SH471M035ST Cornell Dubilier Electronics (CDE) CAP ALUM 470UF 35V 20% RADIAL
105-562K API Delevan Inc INDUCTOR RF CHIP 5.6UH 10% SMD
EMH2T2R Rohm Semiconductor TRANS DUAL NPN 50V 30MA EMT6
EMD4T2R Rohm Semiconductor TRANS COMPLEX DGTL PNP/NPN EMT6
SH221M063ST Cornell Dubilier Electronics (CDE) CAP ALUM 220UF 63V 20% RADIAL
EMD4T2R Rohm Semiconductor TRANS COMPLEX DGTL PNP/NPN EMT6
105-472K API Delevan Inc INDUCTOR RF CHIP 4.7UH 10% SMD
EMD4T2R Rohm Semiconductor TRANS COMPLEX DGTL PNP/NPN EMT6
XN0621600L Panasonic Electronic Components - Semiconductor Products TRANS ARRAY NPN/NPN W/RES MINI6P
105-392K API Delevan Inc INDUCTOR RF CHIP 3.9UH 10% SMD
105-332K API Delevan Inc INDUCTOR RF CHIP 3.3UH 10% SMD
XN0621600L Panasonic Electronic Components - Semiconductor Products TRANS ARRAY NPN/NPN W/RES MINI6P